P-NAME Precision Enables Atomic-Level Materials Engineering
The University of Manchester has reached a 20-nanometre threshold for implanting individual atoms into materials using its Platform for Nanoscale Advanced Materials Engineering (P-NAME). This technical achievement serves as the foundation for the £12.6 million Materials Engineering for Advanced Devices (MEAD) research programme. By using nanoSIMS—a technique that verifies the precise location of atoms at the finest resolution—researchers can feed empirical data back into the engineering process, replacing speculative development with verified, atomic-level control.
MEAD Programme Objectives for Quantum Technologies
Led by Professor Richard Curry, the MEAD programme coordinates efforts between The University of Manchester, Imperial College London, and the University of Leeds. The initiative aims to engineer materials with specific quantum properties to support national security, sensing, and quantum computing. Professor Curry notes that the team’s collective strength in advanced materials and device engineering allows them to build new devices that address common limitations in current quantum hardware. A primary output of this research, detailed in Communications Materials (doi.org/10.1038/s43246-024-00498-0), is the production of ultra-pure silicon, which minimizes atomic impurities that typically interfere with device reliability.
Characterizing Materials at Cryogenic Scales
To evaluate how these atomic modifications function under operational conditions, the team utilizes a custom cryogenic near-field microscope. Researcher Jessie Boland leads this characterization work, employing the instrument to map chemical, electrical, and optical properties at 30-nanometre length scales. By observing these materials at ultra-low temperatures, the researchers can determine how individual atomic placement influences the performance of finished electronic and optical devices.
Applications in Sensing and Secure Communications
The ability to manipulate atomic structures with such precision supports the development of sensors capable of detecting underground pipes and cavities from the surface. These sensors are intended to outperform current models that rely on trapped atoms. The programme also explores how these precisely engineered materials can facilitate secure, eavesdrop-resistant communication systems. The team also targets the creation of computers capable of simulating molecular behavior, a function that could accelerate drug discovery and the design of new materials.

Collaborative Translation of Research
Beyond theoretical study, the MEAD programme is structured to translate findings into commercial applications. The researchers are actively seeking partnerships with entities in the electronic and optical sectors to move these prototypes into real-world use. The goal is to bridge the gap between fundamental research and scalable technology, ensuring that materials designed with isotope-level precision can be integrated into next-generation hardware.
Common Questions Regarding Atomic Implantation
How does the P-NAME instrument achieve 20-nanometre precision?
P-NAME achieves this precision by implanting individual atoms into a substrate and using nanoSIMS to verify their exact placement. This iterative feedback loop allows researchers to adjust their methods based on verified atomic locations rather than guesswork.
What is the role of the MEAD programme?
The £12.6 million MEAD programme, funded by the Engineering and Physical Sciences Research Council (EPSRC), focuses on engineering materials with specific quantum properties to improve computing, secure communications, and sensing technologies.
How does silicon purity affect quantum devices?
Unwanted atomic impurities in silicon can cause interference in quantum systems. The P-NAME platform has produced the world’s purest form of silicon, which helps minimize this interference and enhances the reliability of quantum devices.
What does the cryogenic microscope measure?
The microscope maps electrical, optical, and chemical properties at 30-nanometre length scales at ultra-low temperatures. This allows the team to understand how atomic-level modifications impact the performance of devices in realistic, low-temperature operating environments.