Integrated memristors and thin-film transistors enable programmable reservoir computing
Monolithic three-dimensional integration of Ru/HfO$_2$/TiN memristors with In$_2$O$_3$ channel thin-film transistors creates a hardware reservoir capable of electrically programmable temporal dynamics across eight orders of magnitude. Architectural Integration of Memristors and Thin-Film Transistors Vertical monolithic integration allows memristive conductance dynamics to be modulated directly by thin-film transistors. By mapping synaptic weights onto crossbar array conductances, … Read more